The December issue of High Frequency Electronics has an interesting article from Andrei Grebennikov of Bell Labs Ireland. Linearity and high efficiency design challenges are addressed with a transmission line for output match of a Class E power amplifier using a Nitronex GaN HEMT transistor.
High-Efficiency Transmission-Line GaN HEMT Class E Power Amplifier
Class E GaN HEMT Power Amplifier
Tags: Amplifier·GaN·Power Amplifier
Oleksiy Klymenko from IHP reviews Impulse Radio Receiver Architectures including coherent & non-coherent impulse detection principles and associated simulation techniques in 0.25 um SiGe C BICMOS UWB receiver. The receiver includes the analysis and design of passive balun, LNA, variable gain amplifier (VGA), multiplier, differential 4th & 7th order Bessel Low-Pass Filters. Transient time-domain and [...]
Baudouin Martineau of STMicroelectronics gives an excellent overview of the 60 GHz millimeter wave market, applications including WPAN, automotive radar and 94 GHz imaging; semiconductor technology requirements and 65nm CMOS technology specifically; modeling, parametric cells, electromagnetic simulation, Momentum modeling of vertical and horizontal coupled transformers, LNA design methodology, using circuit and EM simulation and optimization.
Millimeter-wave [...]
Tags: 60 GHz·65nm·Amplifier·cascode·CMOS·EM·Harmonic Balance·LNA·mmW·Momentum·MOSFET·radar·SOI·V-Band·WLAN·WPAN
Monolithic Microwave High Power Amplifiers on GaAs for Phased Array Radar deliver high efficiency for X-band applications. Huet, Bly and Serru of UMS demonstrates the design of a HPA using PHEMT technology.
8W-X-Band-PHEMT-High-Power-Amplifier-Design-UMS
Tags: Amplifier·Class AB·combiner·DRC·GaAs·Gain Compression·Harmonic Balance·Layout·Load Pull·measurements·Momentum·MonteCarlo·optimization·PAE·PDK·PHEMT·Power Amplifier·stability analysis·X-band